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"A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an ..."

Taejoong Song et al. (2022)

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DOI: 10.1109/JSSC.2021.3123077

access: closed

type: Journal Article

metadata version: 2022-01-08

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Taejoong Song, Hoonki Kim, Woojin Rim, Hakchul Jung, Changnam Park, Inhak Lee, Sanghoon Baek, Jonghoon Jung:
A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit. IEEE J. Solid State Circuits 57(1): 236-244 (2022)

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