BibTeX record journals/jssc/JeongIKNSCYKKPK16

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  author    = {Woopyo Jeong and
               Jae{-}Woo Im and
               Doo{-}Hyun Kim and
               Sangwan Nam and
               Dong{-}Kyo Shim and
               Myung{-}Hoon Choi and
               Hyun{-}Jun Yoon and
               Dae{-}Han Kim and
               Youse Kim and
               Hyun Wook Park and
               Dong{-}Hun Kwak and
               Sang{-}Won Park and
               Seok{-}Min Yoon and
               Wook{-}Ghee Hahn and
               Jinho Ryu and
               Sang{-}Won Shim and
               Kyung{-}Tae Kang and
               Jeong{-}Don Ihm and
               In{-}Mo Kim and
               Doosub Lee and
               Ji{-}Ho Cho and
               Moosung Kim and
               Jae{-}hoon Jang and
               Sang{-}Won Hwang and
               Dae{-}Seok Byeon and
               Hyang{-}Ja Yang and
               Ki{-}Tae Park and
               Kyehyun Kyung and
               Jeong{-}Hyuk Choi},
  title     = {A 128 Gb 3b/cell {V-NAND} Flash Memory With 1 Gb/s {I/O} Rate},
  journal   = {{IEEE} J. Solid State Circuits},
  volume    = {51},
  number    = {1},
  pages     = {204--212},
  year      = {2016},
  url       = {},
  doi       = {10.1109/JSSC.2015.2474117},
  timestamp = {Sun, 30 Aug 2020 00:13:03 +0200},
  biburl    = {},
  bibsource = {dblp computer science bibliography,}
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