Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM ..."

Meng-Fan Chang et al. (2013)

> Home

Details and statistics

DOI: 10.1109/JSSC.2012.2230515

access: closed

type: Journal Article

metadata version: 2020-10-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/ChangSLWKCYCLLCSKKT13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/ChangSLWKCYCLLCSKKT13
Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai:
A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes. IEEE J. Solid State Circuits 48(3): 878-891 (2013)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.