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ORCID"High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power ..."
Jiongjiong Mo et al. (2017)
- Jiongjiong Mo
, Hua Chen, Zhiyu Wang, Fa-Xin Yu:
High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application. J. Sensors 2017: 4078240:1-4078240:9 (2017)
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