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ORCID"Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design ..."
Balwinder Raj et al. (2011)
- Balwinder Raj
, Jatin Mitra, Deepak Kumar Bihani, V. Rangharajan, Ashok K. Saxena, Sudeb Dasgupta:
Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology. J. Low Power Electron. 7(2): 163-171 (2011)
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