Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction."

Feng Gao, John P. Hayes (2006)

> Home

Details and statistics

DOI: 10.1166/JOLPE.2006.056

access: closed

type: Journal Article

metadata version: 2023-03-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jolpe/GaoH06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jolpe/GaoH06
Feng Gao, John P. Hayes:
Gate Sizing and Vt Assignment for Active-Mode Leakage Power Reduction. J. Low Power Electron. 2(2): 230-239 (2006)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.