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"A novel single-ended 9T FinFET sub-threshold SRAM cell with high operating ..."

Hitesh Pahuja et al. (2018)

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DOI: 10.1016/J.VLSI.2017.08.004

access: closed

type: Journal Article

metadata version: 2023-09-30

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Hitesh Pahuja, Mintu Tyagi, Sudhakar Panday, Balwinder Singh:
A novel single-ended 9T FinFET sub-threshold SRAM cell with high operating margins and low write power for low voltage operations. Integr. 60: 99-116 (2018)

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