"Analytical model for deriving the threshold voltage of a short gate SOI ..."

Chung Ha Suh (2010)

> Home

Details and statistics

DOI: 10.1049/IET-CDS.2009.0307

access: closed

type: Journal Article

metadata version: 2020-09-10

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/iet-cds/Suh10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/iet-cds/Suh10
Chung Ha Suh:
Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film. IET Circuits Devices Syst. 4(6): 525-530 (2010)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.