![](https://dblp1.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp1.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp1.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
default search action
"500 V breakdown voltage in β-Ga2O3 ..."
Nesa Abedi Rik, Ali A. Orouji, Dariush Madadi (2023)
- Nesa Abedi Rik, Ali A. Orouji
, Dariush Madadi
:
500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit. IET Circuits Devices Syst. 17(4): 199-204 (2023)
![](https://dblp1.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.