"Process variations aware area efficient negative bit-line voltage scheme ..."

Ankur Goel, Rohit K. Sharma, A. K. Gupta (2012)

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DOI: 10.1049/IET-CDS.2011.0036

access: closed

type: Journal Article

metadata version: 2020-09-10

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Ankur Goel, Rohit K. Sharma, A. K. Gupta:
Process variations aware area efficient negative bit-line voltage scheme for improving write ability of SRAM in nanometer technologies. IET Circuits Devices Syst. 6(1): 45-51 (2012)

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