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"Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped ..."
Min Gee Kim et al. (2020)
- Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi:
Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. IEICE Trans. Electron. 103-C(6): 280-285 (2020)
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