"Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching ..."

Yingzhe Wu et al. (2019)

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DOI: 10.1587/TRANSELE.2018ECP5079

access: closed

type: Journal Article

metadata version: 2025-01-19

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Yingzhe Wu, Hui Li, Wenjie Ma, Dingxin Jin:
Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation. IEICE Trans. Electron. 102-C(9): 646-657 (2019)

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