"Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long ..."

Hiroki Shirakawa et al. (2017)

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DOI: 10.1587/TRANSELE.E100.C.928

access: closed

type: Journal Article

metadata version: 2020-10-26

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Hiroki Shirakawa, Keita Yamaguchi, Masaaki Araidai, Katsumasa Kamiya, Kenji Shiraishi:
Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories. IEICE Trans. Electron. 100-C(10): 928-933 (2017)

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