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"An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor ..."

An-Sam Peng, Lin-Kun Wu (2017)

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DOI: 10.1587/TRANSELE.E100.C.424

access: closed

type: Journal Article

metadata version: 2020-04-11

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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/PengW17
An-Sam Peng, Lin-Kun Wu:
An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language. IEICE Trans. Electron. 100-C(5): 424-429 (2017)

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