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"0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs."

Akira Kotabe, Kiyoo Itoh, Riichiro Takemura (2012)

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DOI: 10.1587/TRANSELE.E95.C.555

access: closed

type: Journal Article

metadata version: 2022-07-07

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  dblp key:
  - journals/ieicet/KotabeIT12
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/KotabeIT12
Akira Kotabe, Kiyoo Itoh, Riichiro Takemura:
0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs. IEICE Trans. Electron. 95-C(4): 555-563 (2012)

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