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"Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with ..."

Atsushi Kato et al. (2012)

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DOI: 10.1587/TRANSELE.E95.C.904

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/KatoKIYM12
Atsushi Kato, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Yasuyuki Miyamoto:
Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode. IEICE Trans. Electron. 95-C(5): 904-909 (2012)

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