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"Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High ..."

Seok Gyu Choi et al. (2006)

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DOI: 10.1093/IETELE/E89-C.5.616

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - journals/ieicet/ChoiOLLMSKR06
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  - https://dblp.org/rec/journals/ieicet/ChoiOLLMSKR06
Seok Gyu Choi, Jung Hun Oh, Bok-Hyung Lee, Byeong Ok Lim, Sung Woon Moon, Dong-Hoon Shin, Sam-Dong Kim, Jin Koo Rhee:
Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor. IEICE Trans. Electron. 89-C(5): 616-621 (2006)

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