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"Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices."

Doohyung Cho et al. (2017)

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DOI: 10.1587/TRANSELE.E100.C.439

access: closed

type: Journal Article

metadata version: 2020-04-11

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  dblp key:
  - journals/ieicet/ChoPWKK17
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/ChoPWKK17
Doohyung Cho, Kunsik Park, Jongil Won, Sang-Gi Kim, Kwangsoo Kim:
Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices. IEICE Trans. Electron. 100-C(5): 439-445 (2017)

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