"High Ruggedness Power MOSFET Design by a Self-Align p+ Process."

Feng-Tso Chien et al. (2005)

Details and statistics

DOI: 10.1093/IETELE/E88-C.4.694

access: closed

type: Journal Article

metadata version: 2020-04-11

a service of  Schloss Dagstuhl - Leibniz Center for Informatics