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"Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation."

Masayuki Abe et al. (2006)

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DOI: 10.1093/IETELE/E89-C.7.1057

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/AbeNPFSAL06
Masayuki Abe, Hiroyuki Nagasawa, Stefan Potthast, Jara Fernandez, Jörg Schörmann, Donat Josef As, Klaus Lischka:
Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation. IEICE Trans. Electron. 89-C(7): 1057-1063 (2006)

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