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ORCID"Comparison of single-event transients of T-gate core and IO device in 130 ..."
Yunlong Zheng et al. (2016)
- Yunlong Zheng, Ruofan Dai, Zhuojun Chen, Shulong Sun, Zheng Wang, Zehua Sang, Min Lin, Shichang Zou:
Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. IEICE Electron. Express 13(12): 20160424 (2016)
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