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"Hafnium-nitride gate insulator formed by electron-cyclotron-resonance ..."

Huiseong Han, Shun'ichiro Ohmi (2012)

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DOI: 10.1587/ELEX.9.1329

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/HanO12
Huiseong Han, Shun'ichiro Ohmi:
Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. IEICE Electron. Express 9(16): 1329-1334 (2012)

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