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"Characterization of punch-through phenomenon in SiC-SBD by ..."

Tsuyoshi Funaki et al. (2006)

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DOI: 10.1587/ELEX.3.379

access: open

type: Journal Article

metadata version: 2021-02-12

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  - journals/ieiceee/FunakiMKH06
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  - https://dblp.org/rec/journals/ieiceee/FunakiMKH06
Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara:
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. IEICE Electron. Express 3(16): 379-384 (2006)

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