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"A 128 Kb HfO2 ReRAM with Novel Double-Reference and ..."

Cheng-Ying Chen et al. (2016)

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DOI: 10.1587/ELEX.13.20160061

access: open

type: Journal Article

metadata version: 2021-02-12

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  dblp key:
  - journals/ieiceee/ChenSSZ16
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  - https://dblp.org/rec/journals/ieiceee/ChenSSZ16
Cheng-Ying Chen, Hongbin Sun, Haihua Shen, Feng Zhang:
A 128 Kb HfO₂ ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement. IEICE Electron. Express 13(6): 20160061 (2016)

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