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"A Near-Threshold Soft Error Resilient 7T SRAM Cell with Low Read Time for ..."

Rahebeh Niaraki Asli, Shiva Taghipour (2017)

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DOI: 10.1007/S10836-017-5659-8

access: closed

type: Journal Article

metadata version: 2020-09-11

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Rahebeh Niaraki Asli, Shiva Taghipour:
A Near-Threshold Soft Error Resilient 7T SRAM Cell with Low Read Time for 20 nm FinFET Technology. J. Electron. Test. 33(4): 449-462 (2017)

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