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"Threshold-voltage shift model based on electron tunneling under positive ..."

Piao-Rong Xu, Ruo-He Yao (2018)

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DOI: 10.1016/J.DISPLA.2018.04.003

access: closed

type: Journal Article

metadata version: 2018-08-27

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Piao-Rong Xu, Ruo-He Yao:
Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors. Displays 53: 14-17 (2018)

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