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"OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for ..."
Christian Mayr et al. (2014)
- Christian Mayr, Michael Schultz, Marko Noack, Stephan Henker, Johannes Partzsch, René Schüffny:
OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications. CoRR abs/1409.0171 (2014)
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