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"Study of single event transient induced by heavy-ion in NMOS transistor ..."

Cheng Gao et al. (2019)

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DOI: 10.1002/CPE.4802

access: closed

type: Journal Article

metadata version: 2020-04-07

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  - https://dblp.org/rec/journals/concurrency/GaoZHF19
Cheng Gao, Rui Zhang, Jiaoying Huang, Chengcheng Fu:
Study of single event transient induced by heavy-ion in NMOS transistor and CMOS inverter. Concurr. Comput. Pract. Exp. 31(12) (2019)

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