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"Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on ..."

Xiaoliang Wang et al. (2005)

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DOI: 10.1360/122004-81

access: closed

type: Journal Article

metadata version: 2020-05-18

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  - https://dblp.org/rec/journals/chinaf/WangWHWRFLZLLQ05
Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Junxue Ran, Cebao Fang, Jianping Li, Yiping Zeng, Jinmin Li, Xinyu Liu, He Qian:
Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates. Sci. China Ser. F Inf. Sci. 48(6): 808-814 (2005)

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