"Controlling Memristance and Negative Differential Resistance in ..."

Xin Gan et al. (2022)

> Home

Details and statistics

DOI: 10.1002/AISY.202200020

access: open

type: Journal Article

metadata version: 2022-07-25

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/aisy/GanZHLWZHM22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/aisy/GanZHLWZHM22
Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma:
Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping. Adv. Intell. Syst. 4(6) (2022)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.