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"Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon ..."
Toshiyuki Sameshima et al. (2020)
- Toshiyuki Sameshima, Tomokazu Nagao, Erika Sekiguchi, Masahiko Hasumi:
Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures. IEEE Access 8: 72598-72606 (2020)
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