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"Accurate Layout-Dependent Effect Model in 10 nm-Class DRAM Process Using ..."

Seyoung Kim et al. (2023)

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DOI: 10.1109/ACCESS.2023.3292346

access: open

type: Journal Article

metadata version: 2023-08-05

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Seyoung Kim, Seungho Yang, Hyein Lim, Hyein Lee, Jongwook Jeon, Jung Yun Choi, Jaeha Kim:
Accurate Layout-Dependent Effect Model in 10 nm-Class DRAM Process Using Area-Efficient Array Test Circuits. IEEE Access 11: 70691-70697 (2023)

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