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"Molybdenum and low-temperature annealing of a silicon power P-i-N diode."

J. Vobecký, V. Komarnitskyy, V. Záhlava (2011)

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DOI: 10.1016/J.MICROREL.2010.09.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/VobeckyKZ11
J. Vobecký, V. Komarnitskyy, V. Záhlava:
Molybdenum and low-temperature annealing of a silicon power P-i-N diode. Microelectron. Reliab. 51(3): 566-571 (2011)

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