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"Reliability of advanced high-k/metal-gate n-FET devices."

James H. Stathis, M. Wang, K. Zhao (2010)

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DOI: 10.1016/J.MICROREL.2010.07.017

access: closed

type: Journal Article

metadata version: 2020-02-22

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James H. Stathis, M. Wang, K. Zhao:
Reliability of advanced high-k/metal-gate n-FET devices. Microelectron. Reliab. 50(9-11): 1199-1202 (2010)

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