Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO ..."

Muhammad Sajid et al. (2017)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.07.084

access: closed

type: Journal Article

metadata version: 2022-10-18

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SajidCTGBMK17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SajidCTGBMK17
Muhammad Sajid, Nikolay G. Chechenin, Frank Sill Torres, Usman Ali Gulzari, Muhammad Usman Butt, Zhu Ming, E. U. Khan:
Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO radiation environments. Microelectron. Reliab. 78: 11-16 (2017)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.