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ORCID"Physical degradation of GaN HEMT devices under high drain bias reliability ..."
S. Y. Park et al. (2009)
- S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim:
Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectron. Reliab. 49(5): 478-483 (2009)
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