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"Enhanced reliability for low-temperature gate dielectric of MOS devices by ..."

David C. T. Or et al. (2003)

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DOI: 10.1016/S0026-2714(02)00284-6

access: closed

type: Journal Article

metadata version: 2023-10-02

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David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu:
Enhanced reliability for low-temperature gate dielectric of MOS devices by N₂O or NO plasma nitridation. Microelectron. Reliab. 43(1): 163-166 (2003)

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