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"Hot hole-induced device degradation by drain junction reverse current."

K. S. Kim et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.04.006

access: closed

type: Journal Article

metadata version: 2020-04-08

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  - https://dblp.org/rec/journals/mr/KimKCPJSSC13
K. S. Kim, H. J. Kim, P. H. Choi, H. S. Park, I. H. Joo, J. E. Song, D. H. Song, Byoung Deog Choi:
Hot hole-induced device degradation by drain junction reverse current. Microelectron. Reliab. 53(7): 947-951 (2013)

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