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"A surface potential and quasi-Fermi potential based drain current model ..."

S. Baishya (2009)

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DOI: 10.1016/J.MICROREL.2009.05.001

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Baishya:
A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime. Microelectron. Reliab. 49(7): 681-688 (2009)

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