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"256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers."

Dongku Kang et al. (2017)

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DOI: 10.1109/JSSC.2016.2604297

access: closed

type: Journal Article

metadata version: 2020-08-30

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  - journals/jssc/KangJKKCKRKLKLY17
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  persistent URL:
  - https://dblp.org/rec/journals/jssc/KangJKKCKRKLKLY17
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung:
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. IEEE J. Solid State Circuits 52(1): 210-217 (2017)

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