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ORCID"A 0.33 V 2.5 μW cross-point data-aware write structure, ..."
Wei Jin et al. (2017)
- Wei Jin, Weifeng He, Jianfei Jiang, Haichao Huang, Xuejun Zhao, Yanan Sun, Xin Chen, Naifeng Jing:
A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS. Integr. 58: 27-34 (2017)
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