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"1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for ..."

Shizunori Matsumoto et al. (2005)

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DOI: 10.1093/IETELE/E88-C.2.247

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - journals/ieicet/MatsumotoUHKMMOKYYN05
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  - https://dblp.org/rec/journals/ieicet/MatsumotoUHKMMOKYYN05
Shizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. IEICE Trans. Electron. 88-C(2): 247-254 (2005)

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