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"Flattening Process of Si Surface below 1000°C Utilizing ..."

Dae-Hee Han, Shun'ichiro Ohmi (2013)

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DOI: 10.1587/TRANSELE.E96.C.669

access: closed

type: Journal Article

metadata version: 2020-04-11

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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/HanO13
Dae-Hee Han, Shun'ichiro Ohmi:
Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H₂ Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation. IEICE Trans. Electron. 96-C(5): 669-673 (2013)

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