"Stability of GaN150-based HEMT in high temperature up to 400°C."

Ahmad Hassan et al. (2017)

> Home

Details and statistics

DOI: 10.1109/NEWCAS.2017.8010123

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-28

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/newcas/HassanATHSS17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/newcas/HassanATHSS17
Ahmad Hassan, Mohamed Ali, Aref Trigui, Sami Hached, Yvon Savaria, Mohamad Sawan:
Stability of GaN150-based HEMT in high temperature up to 400°C. NEWCAS 2017: 133-136

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.