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"A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs ..."

Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun (2013)

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DOI: 10.1109/ISQED.2013.6523634

access: closed

type: Conference or Workshop Paper

metadata version: 2017-06-15

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  - conf/isqed/SalahuddinJK13
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Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun:
A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability. ISQED 2013: 353-358

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