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"Origin of physical degradation in AlGaN/GaN on Si high electron mobility ..."

Wardhana A. Sasangka et al. (2015)

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DOI: 10.1109/IRPS.2015.7112768

access: closed

type: Conference or Workshop Paper

metadata version: 2022-03-23

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Wardhana A. Sasangka, Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson:
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. IRPS 2015: 6

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