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"Underlap engineered eight-transistor SRAM cell for stronger data stability ..."

Shairfe Muhammad Salahuddin, Volkan Kursun (2013)

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DOI: 10.1109/ICECS.2013.6815336

access: closed

type: Conference or Workshop Paper

metadata version: 2017-06-15

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  - conf/icecsys/SalahuddinK13
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Shairfe Muhammad Salahuddin, Volkan Kursun:
Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption. ICECS 2013: 25-28

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