Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with ..."

Patrick Fay et al. (1999)

> Home

Details and statistics

DOI: 10.1109/GLSV.1999.757401

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

- view
  authority control:
- export record
  dblp key:
  - conf/glvlsi/FayBCSMWG99
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/glvlsi/FayBCSMWG99
Patrick Fay, Gary H. Bernstein, David H. Chow, Joel N. Schulman, Pinaki Mazumder, William Williamson III, Barry K. Gilbert:
Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. Great Lakes Symposium on VLSI 1999: 162-165

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.