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"Influence of fluorine-based dry etching on electrical parameters of ..."

Davide Bisi et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818819

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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  - conf/essderc/BisiMSCPNLZM13
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  - https://dblp.org/rec/conf/essderc/BisiMSCPNLZM13
Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64

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