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"A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically ..."

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara (2020)

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DOI: 10.1109/CICC48029.2020.9075875

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-29

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Kunyang Liu, Hongliang Pu, Hirofumi Shinohara:
A 0.5-V 2.07-fJ/b 497-F² EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in. CICC 2020: 1-4

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